Recently, Enkris Semiconductor, a leading 3rd-gen GaN epitaxy company and a member of Sinovation Ventures, announced the completion of several hundred million RMB in Series C financing. This is another round of financing since the completion of the B+ round of several hundred million RMB strategic financing in March this year. This round of capital raising was led by NIO Capital and Meituan Longzhu, followed by Huaxing Growth Capital and Xinke Capital under China Renaissance, and the old shareholders Goermicro and 37 Interactive Entertainment continued to increase their investment.
Dr. Xiong Hao, partner of Sinovation Ventures, said that the third-generation semiconductors represented by materials such as gallium nitride and its epitaxial technology are the core “technical infrastructure” of China’s advanced manufacturing. Enkris Semiconductor’s gallium nitride epitaxy growth technology, led by Dr. Cheng Kai, one of the internationally recognized pioneers of gallium nitride epitaxy technology on silicon, represents the world’s top level. We expect that under the leadership of Dr. Cheng Kai, as gallium nitride gradually matures in power electronics, microdisplay and other fields, Enkris Semiconductor will continue to lead technological progress and become a core material supplier in the advanced manufacturing industry chain.
In recent years, gallium nitride materials have not only shown explosive growth in the application of power electronics and new display fields, but also highlighted its unique value in the emerging disruptive innovative applications.
Taking the new energy vehicle applications that have been growing rapidly in recent years as an example, thanks to the excellent characteristics of GaN materials, faster switching speed, higher conversion efficiency, lighter and smaller system size and weight can be achieved in the application of on-board power electronic systems such as on-board charger OBC, DC-DC converter and main inverter, thereby meeting the core requirements of lightweight vehicle body, high system efficiency and long-range battery life. In addition, laser radar (LiDAR), battery management system (BMS), wireless power transmission system, in-vehicle infotainment system (IVI), and new high-efficiency vehicle lighting, vehicle micro-display, etc. are all supported by high-quality GaN materials.
Enkris Semiconductor has been focusing on the R&D and industrialization of high-quality GaN materials for a long time. It has built a leading GaN epitaxial material R&D and production base in China, and has passed the ISO9001:2015 quality management system and IATF16949:2016 automotive quality management system standards certification.
Dr. Cheng Kai, the founder and president of Enkris Semiconductor, said, “This financing represents the capital market’s full recognition and trust in Enkris’s development and strength. In the future, Enkris will continue to increase its R&D and technology investment to accelerate the application of GaN materials in automotive electronics and other fields.”
Since its establishment, Enkris Semiconductor has been committed to the R&D and industrialization of gallium nitride, the third-generation semiconductor material. Enkris Semiconductor, as an innovation-driven international enterprise, has gained the favor of many customers at home and abroad, won dozens of awards from organizations at all levels, and released innovative achievements in top industry journals and top international conferences many times. It has applied for nearly 500 patents and granted nearly 150 patents.